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dc.contributor.authorChang, YHen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorLai, FIen_US
dc.contributor.authorTzeng, KFen_US
dc.contributor.authorYu, HCen_US
dc.contributor.authorSung, CPen_US
dc.contributor.authorYang, HPen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:19:01Z-
dc.date.available2014-12-08T15:19:01Z-
dc.date.issued2005-06-01en_US
dc.identifier.issn1350-2433en_US
dc.identifier.urihttp://dx.doi.org/10.1049/ip-opt:20045068en_US
dc.identifier.urihttp://hdl.handle.net/11536/13660-
dc.description.abstractImproved oxide-implanted VCSELs utilising the tapered oxide layer are presented. The VCSELs exhibited similar static performance, but superior modulation bandwidth up to 13.2 GHz, compared with conventional blunt oxide VCSELs. The damping rate was reduced two times in the tapered oxide VCSEL and therefore enhanced the maximal modulation bandwidth. A very clean eye was demonstrated from the improved VCSEL with a rising time of 26 ps, falling time of 40 ps and jitter of less than 20 ps, operating at 10 Gbit/s with 6 mA bias and 6 dB extinction ratio. A comprehensive small signal measurement and analysis was conducted. Based on the equivalent circuit model, the extrinsic bandwidth limitation of the tapered oxide VCSELs was determined.en_US
dc.language.isoen_USen_US
dc.titleHigh speed (> 13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1049/ip-opt:20045068en_US
dc.identifier.journalIEE PROCEEDINGS-OPTOELECTRONICSen_US
dc.citation.volume152en_US
dc.citation.issue3en_US
dc.citation.spage170en_US
dc.citation.epage173en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000230563500005-
dc.citation.woscount10-
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