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dc.contributor.authorTsou, Wen-Anen_US
dc.contributor.authorChen, Che-Shengen_US
dc.contributor.authorWang, Chun-Kaien_US
dc.contributor.authorChen, Kevin C. J.en_US
dc.contributor.authorWu, Svu-Hsienen_US
dc.contributor.authorWen, Kuei-Annen_US
dc.date.accessioned2014-12-08T15:19:02Z-
dc.date.available2014-12-08T15:19:02Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-4244-2801-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/13667-
dc.description.abstractThis paper presents an analysis and enhancement of efficiency in a class-E power amplifier using MEMS inductors. The M EMS technology is proposed and demonstrated by a prototype inductor. The model of MEMS inductors is created by HFSS simulator and its simulated result has good match with the measured result. Stacked-metal layer inductors in MEMS process are also developed to increase the quality factor. The simulation result of a CMOS class-E PA with MEMS inductors shows that the increased quality factor of inductors by 2 can improve the PA's efficiency by 6%. Furthermore, we present a design methodology for optimizing the PA's efficiency.en_US
dc.language.isoen_USen_US
dc.subjectMEMSen_US
dc.subjectinductorsen_US
dc.subjectquality factoren_US
dc.subjectpower amplifiersen_US
dc.subjectpower efficiencyen_US
dc.titleAnalysis for Efficiency Improvement of CMOS Class-E Power Amplifiers with MEMS Inductorsen_US
dc.typeArticleen_US
dc.identifier.journalAPMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5en_US
dc.citation.spage1683en_US
dc.citation.epage1686en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000279924300429-
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