標題: Determining GaInP/GaAs HBT device structure by DC measurements on a two-emitter HBT device and high frequency transit time measurements
作者: Meng, CC
Tsou, BC
Tseng, SC
電信工程研究所
Institute of Communications Engineering
關鍵字: GaInP/GaAs HBT;emitter ledge;transit time measurement
公開日期: 1-Jun-2005
摘要: A method to monitor the GaInP/GaAs HBT device structure including emitter ledge thickness is demonstrated in this paper. The base thickness and base doping density are obtained through base transit time and base sheet resistance measurements while the base transit time is measured through the cut-off frequency measurements at various bias points. A large size two-emitter HBT device is used to measure the ledge thickness. Emitter doping profile and collector doping profile are obtained by the large size HBT device through C-V measurements. An FATFET device formed by two emitters as drain and source terminals and the interconnect metal as the on-ledge Schottky gate between two emitters is used to measure the ledge thickness.
URI: http://dx.doi.org/10.1093/ietele/e88-c.6.1127
http://hdl.handle.net/11536/13669
ISSN: 0916-8524
DOI: 10.1093/ietele/e88-c.6.1127
期刊: IEICE TRANSACTIONS ON ELECTRONICS
Volume: E88C
Issue: 6
起始頁: 1127
結束頁: 1132
Appears in Collections:Articles