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dc.contributor.authorHsieh, MCen_US
dc.contributor.authorTseng, TYen_US
dc.contributor.authorWei, SMen_US
dc.contributor.authorFu, CMen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:02:44Z-
dc.date.available2014-12-08T15:02:44Z-
dc.date.issued1996-04-01en_US
dc.identifier.issn0577-9073en_US
dc.identifier.urihttp://hdl.handle.net/11536/1367-
dc.description.abstractBy systematically varying the oxygen content of microstrip line resonators made of pulsed laser deposited YBa2Cu3O7-x films, the effect of oxygen deficiency on the effective penetration depth were studied. By using the two-fluid model, the zero-temperature penetration depths for the fully oxygenated (i.e. O=7) and oxygen deficient (O=6.8) states in the same strip are found to be 483.2 nm and 789.8 nm, respectively. The large values obtained are attributed to the granular nature of the YBCO films used. The correlation between the penetration depths and superconducting carrier densities as functions of the oxygen content are also discussed.en_US
dc.language.isoen_USen_US
dc.titleEffects of oxygen content on the penetration depth of pulsed laser deposited YBCO thin filmsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalCHINESE JOURNAL OF PHYSICSen_US
dc.citation.volume34en_US
dc.citation.issue2en_US
dc.citation.spage606en_US
dc.citation.epage610en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1996UK96800069-
顯示於類別:會議論文