Title: | Extraction of substrate parameters for RF MOSFETs based on four-port measurement |
Authors: | Wu, SD Huang, GW Chen, KM Chang, CY Tseng, HC Hsu, TL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | four-port measurement;radio frequency (RF);metal oxide semiconductor field effect transistors (MOSFETs);substrate resistance |
Issue Date: | 1-Jun-2005 |
Abstract: | In this work, a new method for extracting substrate parameters of radio frequency (RF) metal oxide semiconductor field effect transistors (MOSFETs) based on four-port measurement is presented. A T-liked substrate resistance network is used and the values of all components in the cold MOSFETs were extracted directly from the four-port data between 250 MHz and 8.5 GHz. The output admittance Y-22 can be well modeled up to 26.5 GHZ based on the extracted substrate resistances and the other extrinsic capacitances extracted from an active device. |
URI: | http://dx.doi.org/10.1109/LMWC.2005.850566 http://hdl.handle.net/11536/13688 |
ISSN: | 1531-1309 |
DOI: | 10.1109/LMWC.2005.850566 |
Journal: | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS |
Volume: | 15 |
Issue: | 6 |
Begin Page: | 437 |
End Page: | 439 |
Appears in Collections: | Articles |
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