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dc.contributor.authorYeh, YTen_US
dc.contributor.authorChou, CKen_US
dc.contributor.authorHsu, YCen_US
dc.contributor.authorChen, Cen_US
dc.contributor.authorTu, KNen_US
dc.date.accessioned2014-12-08T15:19:08Z-
dc.date.available2014-12-08T15:19:08Z-
dc.date.issued2005-05-16en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1929870en_US
dc.identifier.urihttp://hdl.handle.net/11536/13710-
dc.description.abstractElectromigration has emerged as an important reliability issue in the microelectronics packaging industry since the dimension of solder joints has continued to shrink. In this letter, we report a technique that enables the precise measurement of the important parameters of solder electromigration, such as activation energy, critical length, threshold current density, effective charge numbers, and electromigration rate. Patterned Cu/Ti films in a Si trench were employed for eutectic SnPb solder to be reflowed on, and thus solder Blech specimens were fabricated. Atomic force microscope was used to measure the depletion volume caused by electromigration on the cathode end. The threshold current density is estimated to be 8.5x10(3) A/cm(2) at 100 degrees C, which relates directly to the maximum allowable current that a solder joint can carry without electromigration damage. This technique facilitates the scientifically systematic investigation of electromigration in solders. (c) American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleThreshold current density of electromigration in eutectic SnPb solderen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1929870en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume86en_US
dc.citation.issue20en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000229398000095-
dc.citation.woscount26-
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