Strong anisotrpoic maganetoresistance and magnetic interaction in La0.7Ce0.3Mn0.3/La0.7Ca0.3MnO3 p-n junction

doi:10.1063/1.1850378

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chou, H	en_US
dc.contributor.author	Hong, ZY	en_US
dc.contributor.author	Sun, SJ	en_US
dc.contributor.author	Juang, JY	en_US
dc.contributor.author	Chang, WJ	en_US
dc.date.accessioned	2014-12-08T15:19:09Z	-
dc.date.available	2014-12-08T15:19:09Z	-
dc.date.issued	2005-05-15	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1850378	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13715	-
dc.description.abstract	The p-n junction made by colossal magnetoresistance materials, such as La0.7Ce0.3MnO3/La0.7Ca0.3MnO3, has great interest for its potential applications. However, the physics of the magnetic state and transport properties of the interface still remains open. In this article, bilayer La0.7Ce0.3MnO3/La0.7Ca0.3MnO3/STO films with a nearly perfect interface were studied. The p-n interface possibly becomes an antiferromagnetion-insulating layer as their parent compound, LaMnO3, and confines the bias current flowing only on the top layer. The top and bottom layers interact with each other in a way that a strong anisotropy tin magnetoresistance measurements was observed. (c) 2005 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Strong anisotrpoic maganetoresistance and magnetic interaction in La0.7Ce0.3Mn0.3/La0.7Ca0.3MnO3 p-n junction	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1063/1.1850378	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	97	en_US
dc.citation.issue	10	en_US
dc.citation.epage		en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000230168300009	-
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