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dc.contributor.authorWu, SDen_US
dc.contributor.authorHuang, GWen_US
dc.contributor.authorChen, KMen_US
dc.contributor.authorTseng, HCen_US
dc.contributor.authorHsu, TLen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:19:10Z-
dc.date.available2014-12-08T15:19:10Z-
dc.date.issued2005-05-01en_US
dc.identifier.issn0916-8524en_US
dc.identifier.urihttp://dx.doi.org/10.1093/ietele/e88-c.5.851en_US
dc.identifier.urihttp://hdl.handle.net/11536/13730-
dc.description.abstractRF MOSFET's are usually measured in common source configuration by a 2-port network analyzer, and the common gate and commen drain S-parameters cannot be directly measured from a conventional 2-port test structure. In this work, a 4-port test structure for on-wafer measurement of RF MOSFET's is proposed. Four-port measurements for RF MOSFET's in different dimensions and the de-embedded procedures are performed up to 20 GHz. The S-parameters of the RF MOSFET in common source (CS), common gate (CG), and common drain (CD) configurations are obtained from a single DUT and one measurement procedure. The dependence of common source S-parameters of the device on substrate bias are also shown.en_US
dc.language.isoen_USen_US
dc.subject4-porten_US
dc.subjectRF MOSFETen_US
dc.subjectcommon sourceen_US
dc.subjectcommon gateen_US
dc.subjectcommon drainen_US
dc.subjectsubstrate biasen_US
dc.titleRF MOSFET characterization by four-port measurementen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1093/ietele/e88-c.5.851en_US
dc.identifier.journalIEICE TRANSACTIONS ON ELECTRONICSen_US
dc.citation.volumeE88Cen_US
dc.citation.issue5en_US
dc.citation.spage851en_US
dc.citation.epage856en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000229253000012-
Appears in Collections:Conferences Paper