Temperature Dependence of Breakdown Voltage in Silicon Abrupt p-n Junctions

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	張俊彥	zh_TW
dc.contributor.author	邱勝雄	zh_TW
dc.contributor.author	許祿寶	zh_TW
dc.contributor.author	C.Y.Chang	en_US
dc.contributor.author	S.S.Chiu	en_US
dc.contributor.author	Lu-Pao Hsu	en_US
dc.date.accessioned	2017-10-06T06:18:01Z	-
dc.date.available	2017-10-06T06:18:01Z	-
dc.date.issued	1971-04	en_US
dc.identifier.uri	http://hdl.handle.net/11536/137464	-
dc.description.abstract	Temperature dependence of breakdowm voltage in silicon abrupt p+n junction has been calculated using a modified Baraff theory and measured experimentally from 77°K to 500°K, and with the substrate doping from 10^15 cm^-3 to 10^18 cm^-3. Experimental data are in good agreement with the results of the theoretical calculations. These results strongly substantiate the validity of the modified Baraff theory which has been pointed out by Sze and Cowwell.	en_US
dc.language.iso	en_US	en_US
dc.publisher	交大學刊編輯委員會	zh_TW
dc.title	Temperature Dependence of Breakdown Voltage in Silicon Abrupt p-n Junctions	en_US
dc.type	Campus Publications	en_US
dc.identifier.journal	交大學刊	zh_TW
dc.identifier.journal	SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY	en_US
dc.citation.volume	5	en_US
dc.citation.issue	1	en_US
dc.citation.spage	83	en_US
dc.citation.epage	88	en_US
顯示於類別：	交大學刊

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。