Some Dielectric and Conduction Properties of the r.f. Reactively Sputtered Al2O3 Thin Film

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DC Field	Value	Language
dc.contributor.author	陳茂傑	zh_TW
dc.contributor.author	M.C.Chen	en_US
dc.date.accessioned	2017-10-06T06:18:02Z	-
dc.date.available	2017-10-06T06:18:02Z	-
dc.date.issued	1972-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/137478	-
dc.description.abstract	Dielectric films of Al2O3 were prepared by r.f. reactive sputtering. Investigation was then made on their dielectric dispersion and leakage characteristics.	en_US
dc.language.iso	en_US	en_US
dc.publisher	交大學刊編輯委員會	zh_TW
dc.title	Some Dielectric and Conduction Properties of the r.f. Reactively Sputtered Al2O3 Thin Film	en_US
dc.type	Campus Publications	en_US
dc.identifier.journal	交大學刊	zh_TW
dc.identifier.journal	SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY	en_US
dc.citation.volume	5	en_US
dc.citation.issue	2	en_US
dc.citation.spage	69	en_US
dc.citation.epage	74	en_US
Appears in Collections:	Science Bulletin National Chiao-Tung University

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