Reoxidation behavior of high-nitrogen oxynitride films after O(2) and N(2)O treatment

doi:10.1143/JJAP.44.2993

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, BC	en_US
dc.contributor.author	Chang, KM	en_US
dc.contributor.author	Lai, CH	en_US
dc.contributor.author	Hsieh, KY	en_US
dc.contributor.author	Yao, JM	en_US
dc.date.accessioned	2014-12-08T15:19:12Z	-
dc.date.available	2014-12-08T15:19:12Z	-
dc.date.issued	2005-05-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.44.2993	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13750	-
dc.description.abstract	Reoxidation of a high-nitrogen ultrathin oxynitride (similar to 1.3nm) has been studied. The reoxidation is conducted using an alternation of nitrous oxide and oxygen gas in rapid thermal oxidation (RTO). The new finding in this study is the zig-zag characteristic of the oxidation rate by O(2) and N(2)O. It is clear that the N(2)O oxidation rate is almost independent of the concentration of nitrogen in oxynitride through out the rapid thermal oxidation process, but the O2 oxidation rate is not.	en_US
dc.language.iso	en_US	en_US
dc.title	Reoxidation behavior of high-nitrogen oxynitride films after O(2) and N(2)O treatment	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.44.2993	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS	en_US
dc.citation.volume	44	en_US
dc.citation.issue	5A	en_US
dc.citation.spage	2993	en_US
dc.citation.epage	2994	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
顯示於類別：	期刊論文