空乏區寬度之調變效應對高低高雙飄帶衝度二極體之影響

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	張懋中	zh_TW
dc.contributor.author	陳茂傑	zh_TW
dc.contributor.author	M.C.Chang	en_US
dc.contributor.author	M.C.Chen	en_US
dc.date.accessioned	2017-10-06T06:22:48Z	-
dc.date.available	2017-10-06T06:22:48Z	-
dc.date.issued	1977-09	en_US
dc.identifier.uri	http://hdl.handle.net/11536/137587	-
dc.description.abstract	The effect of the depletion-region-width modulation has been included in the Quasi-static large signal calculations of the Lo-Hi-Lo double drift IMPATT diodes.In addition, a linear-generation-function model is introduced to give a comprehensive understanding of the phase advance and the power degradation effect of the diodes.The phase advance △Ø is derived versus of voltage modulation. The output power losses are also calculated as a function of voltage swing and compared with the uncorrected results. Efficiency as a function of avalavche-to frift-voltage ratio Va/Vd is obtained and Va/Vd≈1.0 is shown as the optimum condition for a double drift Lo-Hi-Lo diodes at 50% modulation .	en_US
dc.language.iso	en_US	en_US
dc.publisher	交大學刊編輯委員會	zh_TW
dc.title	空乏區寬度之調變效應對高低高雙飄帶衝度二極體之影響	zh_TW
dc.title	Effects of Depletion-Region-Width Modulation on the Properties of Lo-Hi-Lo Double Drift IMPATT Diodes	en_US
dc.type	Campus Publications	en_US
dc.identifier.journal	交通大學學報	zh_TW
dc.identifier.journal	The Journal of National Chiao Tung University	en_US
dc.citation.volume	3	en_US
dc.citation.spage	13	en_US
dc.citation.epage	=O60-1	en_US
顯示於類別：	交通大學學報

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