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dc.contributor.authorWang, DYen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:19:22Z-
dc.date.available2014-12-08T15:19:22Z-
dc.date.issued2005-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.44.1857en_US
dc.identifier.urihttp://hdl.handle.net/11536/13838-
dc.description.abstractIn this study, we utilize the current-voltage (I-V) measurement method for investigating the ferroelectric characteristics of ferroelectric capacitors, such as hysteresis loops, switching current characteristics, retention properties and depolarization characteristics. By applying triangular voltage wave forms without sweeping and measuring delay, the hysteresis switching current characteristic was determined and the polarization-voltage (P-V) loop could be obtained using an integral calculus. Additionally, two kinds of poling measurement were utilized to investigate the full-switching and nonswitching current characteristics. A strong agreement was found between nonvolatile polarization (Delta P) obtained from P-V loops and that obtained by poling measurements. Moreover, modified poling measurements were utilized to study the retention property of ferroelectric capacitors. A dynamic switching current characteristic was found in retention duration and an increased coercive voltage was also observed in its half-hysteresis loops as remaining time increased. Furthermore, another modified poling profile was utilized to investigate the depolarization characteristics of ferroelectric films.en_US
dc.language.isoen_USen_US
dc.subjecthysteresis measurementen_US
dc.subjectferroelectric material polarizationen_US
dc.subjectswitching currenten_US
dc.subjectI-V measurementen_US
dc.titleSwitching current study: Hysteresis measurement of ferroelectric capacitors using current-voltage measurement methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.44.1857en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume44en_US
dc.citation.issue4Aen_US
dc.citation.spage1857en_US
dc.citation.epage1861en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000228810000070-
dc.citation.woscount2-
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