標題: Reverse CoSi(2) thermal stability and digitized sheet resistance increase of sub-90 nm polysilicon lines
作者: Lo, CY
Peng, YC
Chen, YM
Tu, GC
Lin, SS
Chen, WM
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: cobalt silicide;thermal stability;agglomeration;transmission electron microscopy (TEM);sheet resistance (Rs);polysilicon
公開日期: 1-四月-2005
摘要: An equation for quantifying the CoSi(2) thermal stability of polysilicon lines ranging from 50 nm to 2 mu m is proposed for the first time. In contrast to the intuitive thinking of narrower lines having a worse thermal stability, the equation predicts the weakest thermal stability occurring at the super nominal line in 90nm technology. An interesting phenomenon of digitized resistance increase is also reported for the first time.
URI: http://dx.doi.org/10.1143/JJAP.44.2217
http://hdl.handle.net/11536/13840
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.2217
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
Issue: 4B
起始頁: 2217
結束頁: 2220
顯示於類別:期刊論文


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