Fabrication of large-area GaN-based light-emitting diodes on Cu substrate

Abstract

A large-area GaN-based light-emitting diode (LED) 1000 x 1000 mu m(2) in size with a p-side down configuration was fabricated using wafer bonding and laser lift-off (LLO) techniques. The thin GaN LED was transferred onto a copper substrate without p peeling or cracks. The large-area LEDs showed a uniform light-emission pattern over entire defined mesa area without a transparent contact layer on the p-type GaN. The operating current of the large-area LEDs can be driven up to 1000 mA with continuously increasing light output-power. The light output-power is 240 mW with a driving current of 1000 mA. Large-area emission and high current operation make the LLO-LEDs applicable to high-power LED applications.