以電泳法沉積奈米碳管的電阻式記憶體之轉態特性研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	林千詠	zh_TW
dc.contributor.author	曾俊元	zh_TW
dc.contributor.author	Lin, Chien-Yung	en_US
dc.contributor.author	Tseng, Tseung-Yuen	en_US
dc.date.accessioned	2018-01-24T07:37:01Z	-
dc.date.available	2018-01-24T07:37:01Z	-
dc.date.issued	2016	en_US
dc.identifier.uri	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070350123	en_US
dc.identifier.uri	http://hdl.handle.net/11536/138878	-
dc.language.iso	en_US	en_US
dc.subject	奈米碳管	zh_TW
dc.subject	電阻式記憶體	zh_TW
dc.subject	電泳法	zh_TW
dc.subject	carbon nanotubes	en_US
dc.subject	resistive random access memory	en_US
dc.subject	electrophoretic deposition	en_US
dc.title	以電泳法沉積奈米碳管的電阻式記憶體之轉態特性研究	zh_TW
dc.title	Investigation on Switching Characteristics of CNT Fabric RRAM Deposited by Electrophoretic Deposition	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子工程學系電子研究所	zh_TW
顯示於類別：	畢業論文