不同退火條件下對於p-type SnO 與 n-type SnO2 薄膜電晶體之特性探討

Abstract

隨著顯示器產業的迅速發展，對於做為畫素開關元件以及電流驅動元件的薄膜電晶體隻要求也隨之增加，而傳統的非晶矽薄膜電晶體已漸漸的無法滿足現今的需求。近年來，金屬氧化物薄膜做為通道層的薄膜電晶體獲得了許多研究者的關注，由於其光穿透性佳、高載子遷移率及低廉的製造成本，使其成為薄膜電晶體通道層的絕佳人選。 然而，相對於n型的金屬氧化物薄膜電晶體蓬勃發展，p型金屬氧化物薄膜電晶體無論是在研究數量及特性上都無法與之匹配，這直接阻礙了金屬氧化物薄膜電晶體發展互補式電路的可能性。因此在本論文中，我們使用氧化錫薄膜做為通道層，藉由不同的退火條件分別產生並優化其p型及n型的特性，以提供金屬氧化物薄膜在類CMOS互補式電路上發展的絕佳人選。

With the rapid development of active-matrix flat panel displays (AMFPDs), thin film transistor (TFT) technologies have been widely used for display application, gradually, the traditional amorphous-Si TFTs cannot meet the requirement nowadays. In recent years, using metal oxide as TFTs channel layer has been attract by a lot of researchers due to the high transparency, high mobility and low process cost, which enable metal oxide to be an excellent candidate material of TFTs channel layer. However, compare to the well development of n-type metal oxide TFTs, p-type TFTs show much less amount of researches and much worse characteristics, these directly stop TFTs from the development of complementary circuit. In this thesis, we use SnO and SnO2 as the channel layer, by utilizing different annealing condition to fabricate and optimize the p-type and n-type TFTs, providing a brilliant candidate for the development of complementary circuit.