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dc.contributor.authorYang, HPDen_US
dc.contributor.authorLai, FIen_US
dc.contributor.authorChang, YHen_US
dc.contributor.authorYu, HCen_US
dc.contributor.authorSung, CPen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorWang, SCen_US
dc.contributor.authorLin, SYen_US
dc.contributor.authorChi, JYen_US
dc.date.accessioned2014-12-08T15:19:30Z-
dc.date.available2014-12-08T15:19:30Z-
dc.date.issued2005-03-17en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:20058344en_US
dc.identifier.urihttp://hdl.handle.net/11536/13892-
dc.description.abstractA proton-implanted photonic crystal vertical-cavity surface-emitting laser for fibre optic applications is demonstrated. Ultra-low threshold current of about 1.25 mA, single fundamental mode (SMSR > 40 dB) CW output power of over 1 mW, with a pulsed output power exceeding 2 mW has been achieved in the 850 nm range.en_US
dc.language.isoen_USen_US
dc.titleSinglemode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:20058344en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume41en_US
dc.citation.issue6en_US
dc.citation.spage326en_US
dc.citation.epage328en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000227906000026-
dc.citation.woscount18-
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