氧化銦錫磊晶薄膜於可撓式雲母基板之研究

Abstract

氧化銦錫(ITO)為傳統上最廣泛應用的透明導電薄膜，由於其高透明度及良好之導電性，ITO於高分子軟性基板已廣泛應用於各種光電產品，如觸控面板、智慧型節能窗戶、隔熱紙、場效電晶體或是太陽能電池的導電層，但有效取代高分子軟性基板的材料一直是個棘手的課題，本研究藉由脈衝雷射沉積法成功結合氧化銦錫薄膜的透明導電性與透明白雲母基板的可撓性，製造出兼具輕盈、透明、導電的可撓式高磊晶薄膜樣品。氧化銦錫薄膜之結構分析包含高解析 X 光繞射儀以及高解析穿透式電子顯微鏡來分析薄膜晶體結構、基板磊晶關係以及應力應變與缺陷等結構性質，在製程中反射式高能量電子繞射可觀察樣品表面結構，此外原子力顯微鏡可用於觀察薄膜之表面形貌起伏程度。至於光學性質分析部分，紫外光/可見光分光光譜儀可瞭解氧化銦錫磊晶薄膜之穿透率等性質，為了觀察薄膜之可靠度及耐用性，我們利用彎曲測試及疲勞測試觀察不同膜厚之ITO之導電度在不同曲率半徑的變化，藉由以上詳細的結構與光學性質上的量測，我們成功地研究了氧化銦錫磊晶薄膜的晶體結構與其光學、導電性質的關係。

Muscovite mica, a transparent and elastic two-dimensional material which has been used 2.6 million years ago. However, the application of mica as flexible substrate is few. Two-dimensional materials are 2-3 atom-thick layer structure weakly bonded by van der waals force, but exhibit extraordinary stiffness and high transparency. In this work, we fabricate ITO epitaxial films on highly transparent flexible muscovite by means of pulsed laser deposition (PLD), equipped with reflection high-energy electron diffraction (RHEED). Structural characterizations were executed by high-resolution x-ray diffraction (HRXRD) and reciprocal space mapping (RSM) to discover both of the crystallography parameters and epitaxial relation between film and substrate. Furthermore, high-resolution transmission electron microscope (HRTEM) results show the crystallinity at atomic scale consisting with the x-ray diffraction. Meanwhile, reflection high-energy electron diffraction (RHEED) was conducted to investigate the growth process and surface structure of the indium tin oxide. As to physical investigate the transmission, and optical properties, UV/Visible spectrographic is induced. Within these comprehensive studies, we successfully analyze the structure of the indium tin oxide thin film and unveil the optical properties thoroughly.