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dc.contributor.author李显章zh_TW
dc.contributor.author朱英豪zh_TW
dc.contributor.authorLee, Hsien-Changen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.date.accessioned2018-01-24T07:37:27Z-
dc.date.available2018-01-24T07:37:27Z-
dc.date.issued2016en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070351558en_US
dc.identifier.urihttp://hdl.handle.net/11536/139115-
dc.description.abstract氧化铟锡(ITO)为传统上最广泛应用的透明导电薄膜,由于其高透明度及良好之导电性,ITO于高分子软性基板已广泛应用于各种光电产品,如触控面板、智慧型节能窗户、隔热纸、场效电晶体或是太阳能电池的导电层,但有效取代高分子软性基板的材料一直是个棘手的课题,本研究藉由脉冲雷射沉积法成功结合氧化铟锡薄膜的透明导电性与透明白云母基板的可挠性,制造出兼具轻盈、透明、导电的可挠式高磊晶薄膜样品。氧化铟锡薄膜之结构分析包含高解析 X 光绕射仪以及高解析穿透式电子显微镜来分析薄膜晶体结构、基板磊晶关系以及应力应变与缺陷等结构性质,在制程中反射式高能量电子绕射可观察样品表面结构,此外原子力显微镜可用于观察薄膜之表面形貌起伏程度。至于光学性质分析部分,紫外光/可见光分光光谱仪可瞭解氧化铟锡磊晶薄膜之穿透率等性质,为了观察薄膜之可靠度及耐用性,我们利用弯曲测试及疲劳测试观察不同膜厚之ITO之导电度在不同曲率半径的变化,藉由以上详细的结构与光学性质上的量测,我们成功地研究了氧化铟锡磊晶薄膜的晶体结构与其光学、导电性质的关系。zh_TW
dc.description.abstractMuscovite mica, a transparent and elastic two-dimensional material which has been used 2.6 million years ago. However, the application of mica as flexible substrate is few. Two-dimensional materials are 2-3 atom-thick layer structure weakly bonded by van der waals force, but exhibit extraordinary stiffness and high transparency. In this work, we fabricate ITO epitaxial films on highly transparent flexible muscovite by means of pulsed laser deposition (PLD), equipped with reflection high-energy electron diffraction (RHEED). Structural characterizations were executed by high-resolution x-ray diffraction (HRXRD) and reciprocal space mapping (RSM) to discover both of the crystallography parameters and epitaxial relation between film and substrate. Furthermore, high-resolution transmission electron microscope (HRTEM) results show the crystallinity at atomic scale consisting with the x-ray diffraction. Meanwhile, reflection high-energy electron diffraction (RHEED) was conducted to investigate the growth process and surface structure of the indium tin oxide. As to physical investigate the transmission, and optical properties, UV/Visible spectrographic is induced. Within these comprehensive studies, we successfully analyze the structure of the indium tin oxide thin film and unveil the optical properties thoroughly.en_US
dc.language.isozh_TWen_US
dc.subject氧化铟锡zh_TW
dc.subject可挠式zh_TW
dc.subject磊晶zh_TW
dc.subject白云母zh_TW
dc.subject透明导电薄膜zh_TW
dc.subjectIndium Tin Oxideen_US
dc.subjectFlexibleen_US
dc.subjectEpitaxialen_US
dc.subjectMuscoviteen_US
dc.subjectTCOen_US
dc.title氧化铟锡磊晶薄膜于可挠式云母基板之研究zh_TW
dc.titleStructural, Optical and Electronic Properties of Indium Tin Oxide Epitaxial Thin Films Grown on Flexible Muscoviteen_US
dc.typeThesisen_US
dc.contributor.department材料科学与工程学系所zh_TW
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