分子束磊晶成長碲化鋅/硒化鋅布拉格反射器之反射量測與擬合

Abstract

摘要

布拉格反射器因它的高反射率而相當值得研究。布拉格反射器可以應用在許多光學元件上，例如發光二極體、光感測器以及垂直共振腔面射雷射。高品質布拉格反射器對提昇光學元件的效能扮演著相當重要的角色，以先進的磊晶技術可以成功製造半導體高品質布拉格反射器，像是有機金屬化學氣相沉積法或分子束磊晶法。

在這篇論文中，我們成功利用分子束磊晶系統製造出二六族化合物半導體的布拉格反射器，樣品的反射率高達94%。另外我們使用電腦軟體MATLAB及傳遞矩陣法來模擬反射光譜。對照實驗數據以及電腦分析的結果，我們得到影響布拉格反射器反射率的因素。

Abstract

Distributed Bragg Reflector (DBR) is a promising device to discover because of its high reflectivity. DBR is used for many optoelectronic devices such as light-emitting diodes (LEDs), photodetectors and Vertical-cavity surface-emitting lasers (VCSELs). The high-quality DBR plays an important role to enhance the performance of optical devices. Some advanced methods, such as Metal Organic Vapour Phase Epitaxy (MOVPE) or Molecular Beam Epitaxy (MBE), can help us to grow semiconductor DBR.

In this thesis, DBRs of 94 % high reflectivity based on II-VI compounds were fabricated by MBE system. The transfer matrix method was used to simulate the reflectance spectrum by using a computing program, MATLAB. The comparison between experiment results and simulation data reveals several factors that could affect the reflectivity of DBR mirror.