完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, HY | en_US |
dc.contributor.author | Chen, KM | en_US |
dc.contributor.author | Huang, GW | en_US |
dc.contributor.author | Chang, CY | en_US |
dc.contributor.author | Huang, TY | en_US |
dc.date.accessioned | 2014-12-08T15:19:33Z | - |
dc.date.available | 2014-12-08T15:19:33Z | - |
dc.date.issued | 2005-03-05 | en_US |
dc.identifier.issn | 0895-2477 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1002/mop.20666 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13917 | - |
dc.description.abstract | In this paper, an improved method for extracting the small-signal equivalent-circuit elements of an HBT is proposed. A more general HBT equivalent circuit and a more general explicit equation on the total extrinsic elements are introduced. Linear least-square algorithms are cleverly adopted to reduce the number of error function. As a result, the modified approach can yield a better fit between the measured and simulated S-parameters over the conventional method. (C) 2005 Wiley Periodicals, Inc. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | HBT | en_US |
dc.subject | device modeling | en_US |
dc.subject | small-signal modeling | en_US |
dc.subject | parameter extraction | en_US |
dc.subject | microwave transistor | en_US |
dc.title | An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBT | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1002/mop.20666 | en_US |
dc.identifier.journal | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | en_US |
dc.citation.volume | 44 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.spage | 456 | en_US |
dc.citation.epage | 460 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000226945900021 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |