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dc.contributor.authorChen, HYen_US
dc.contributor.authorChen, KMen_US
dc.contributor.authorHuang, GWen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorHuang, TYen_US
dc.date.accessioned2014-12-08T15:19:33Z-
dc.date.available2014-12-08T15:19:33Z-
dc.date.issued2005-03-05en_US
dc.identifier.issn0895-2477en_US
dc.identifier.urihttp://dx.doi.org/10.1002/mop.20666en_US
dc.identifier.urihttp://hdl.handle.net/11536/13917-
dc.description.abstractIn this paper, an improved method for extracting the small-signal equivalent-circuit elements of an HBT is proposed. A more general HBT equivalent circuit and a more general explicit equation on the total extrinsic elements are introduced. Linear least-square algorithms are cleverly adopted to reduce the number of error function. As a result, the modified approach can yield a better fit between the measured and simulated S-parameters over the conventional method. (C) 2005 Wiley Periodicals, Inc.en_US
dc.language.isoen_USen_US
dc.subjectHBTen_US
dc.subjectdevice modelingen_US
dc.subjectsmall-signal modelingen_US
dc.subjectparameter extractionen_US
dc.subjectmicrowave transistoren_US
dc.titleAn improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBTen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/mop.20666en_US
dc.identifier.journalMICROWAVE AND OPTICAL TECHNOLOGY LETTERSen_US
dc.citation.volume44en_US
dc.citation.issue5en_US
dc.citation.spage456en_US
dc.citation.epage460en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000226945900021-
dc.citation.woscount1-
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