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dc.contributor.authorSheu, JTen_US
dc.contributor.authorChen, CCen_US
dc.contributor.authorHuang, PCen_US
dc.contributor.authorHsu, MLen_US
dc.date.accessioned2014-12-08T15:19:33Z-
dc.date.available2014-12-08T15:19:33Z-
dc.date.issued2005-03-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mee.2005.01.005en_US
dc.identifier.urihttp://hdl.handle.net/11536/13921-
dc.description.abstractWe demonstrate selective deposition of citrate-passivated gold nanoparticles onto silicon dioxide patterns. Further, selective deposition of gold nanoparticles on the oxides, generated by scanning probe lithography (SPL). surface of silicon nanowire is achieved. Main methodology is to form H-terminated silicon surface and hydroxyl group on SiO2 sample surface, then link amino function group only on SiO2 surface by self-assembly mechanism. N-(2-Aminoethyl)-3-aminopropyl-trimethoxysilane (AEAPTMS) pretreated sample was immersed in the gold colloidal solution such that the NH2 group become protonated forming NH3+. The NH3+ groups provide a negative charge bindable environment for citrate-passivated gold nanoparticles. Impact on different AEAPTMS dilute solvents is also investigated for the performance of selective deposition of gold nanoparticles. It is found that H-terminated sample surface effectively eliminated nonspecific reaction during silanization such that microscale or nanoscale selective deposition of gold nanoparticles is obtainable. The proposed method can be applied in both nanoelectronics and nanobiosensors. (c) 2005 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectgold nanoparticlesen_US
dc.subjectscanning probe lithographyen_US
dc.subjectself-assemblyen_US
dc.subjectAEAPTMSen_US
dc.titleSelective deposition of gold nanoparticles on SiO2/Si nanowireen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.mee.2005.01.005en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume78-79en_US
dc.citation.issueen_US
dc.citation.spage294en_US
dc.citation.epage299en_US
dc.contributor.department材料科學與工程學系奈米科技碩博班zh_TW
dc.contributor.departmentGraduate Program of Nanotechnology , Department of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000228589700049-
Appears in Collections:Conferences Paper


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