非晶態氧化銦鎵鋅電阻式記憶體與薄膜電晶體整合之研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	簡振宇	zh_TW
dc.contributor.author	劉柏村	zh_TW
dc.contributor.author	謝漢萍	zh_TW
dc.contributor.author	Chien, Chen-Yu	en_US
dc.contributor.author	Liu, Po-Tsun	en_US
dc.contributor.author	Shieh, Han-Ping	en_US
dc.date.accessioned	2018-01-24T07:37:59Z	-
dc.date.available	2018-01-24T07:37:59Z	-
dc.date.issued	2016	en_US
dc.identifier.uri	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070350610	en_US
dc.identifier.uri	http://hdl.handle.net/11536/139411	-
dc.language.iso	en_US	en_US
dc.subject	透明非晶態金屬氧化物	zh_TW
dc.subject	氧化銦鎵鋅	zh_TW
dc.subject	電阻式記憶體	zh_TW
dc.subject	薄膜電晶體	zh_TW
dc.subject	整合	zh_TW
dc.subject	TAOS	en_US
dc.subject	IGZO	en_US
dc.subject	RRAM	en_US
dc.subject	TFT	en_US
dc.subject	Integration	en_US
dc.title	非晶態氧化銦鎵鋅電阻式記憶體與薄膜電晶體整合之研究	zh_TW
dc.title	Study on Integration of a-InGaZnO Based Resistive Random Access Memory and Thin-film Transistor	en_US
dc.type	Thesis	en_US
dc.contributor.department	光電工程研究所	zh_TW
顯示於類別：	畢業論文