NAND 快閃記憶體在少量寫入/抹除操作下異常的次臨界擺幅及轉導回復

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DC Field	Value	Language
dc.contributor.author	劉承泓	zh_TW
dc.contributor.author	白田理一郎	zh_TW
dc.contributor.author	Liu, Chen-Hung	en_US
dc.contributor.author	Riichiro, Shirota	en_US
dc.date.accessioned	2018-01-24T07:38:13Z	-
dc.date.available	2018-01-24T07:38:13Z	-
dc.date.issued	2016	en_US
dc.identifier.uri	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070150726	en_US
dc.identifier.uri	http://hdl.handle.net/11536/139648	-
dc.description.abstract	本篇論文主要研究不同NO氮化濃度下NAND快閃記憶體元件抹寫週期的忍耐度(endurance)。採用三維元件模擬，來驗證量測特性。我們發現週期忍耐度後臨限電壓位移，轉導(Gm)回復和次臨界擺幅 (SS) 上升等現象發生。本論文主要討論一種模型，淺溝槽絕緣(STI)內的正電荷及穿隧氧化層邊緣(edge of the tunnel oxide)的正電荷為最可能週期忍耐度後發生退化的主要原因。	zh_TW
dc.description.abstract	In this thesis, we investigate endurance characteristic for 100 cycles with different NO nitridation in NAND FLASH memory device. After endurance, the Vt shift, Gm recovery and subthreshold swing (SS) degradation occurred. So, in this work, one possible model of degradation is investigated by examining the measurement data and found that the positive fixed charge in STI and in the edge of the tunnel oxide are the most reasonable to affect these degradations.	en_US
dc.language.iso	en_US	en_US
dc.subject	次臨界擺幅	zh_TW
dc.subject	轉導回復	zh_TW
dc.subject	淺溝槽絕緣	zh_TW
dc.subject	旋轉塗佈玻璃	zh_TW
dc.subject	週期忍耐度	zh_TW
dc.subject	NO氮化製程	zh_TW
dc.subject	sub-threshold swing	en_US
dc.subject	gm recovery	en_US
dc.subject	STI	en_US
dc.subject	spin on glass	en_US
dc.subject	fixed charge	en_US
dc.subject	interface state density	en_US
dc.subject	endurance	en_US
dc.subject	NO nitridation	en_US
dc.title	NAND 快閃記憶體在少量寫入/抹除操作下異常的次臨界擺幅及轉導回復	zh_TW
dc.title	Anomalous subthreshold swing and transconductance recovery within early program erase cycling of the NAND flash memory	en_US
dc.type	Thesis	en_US
dc.contributor.department	電機工程學系	zh_TW
Appears in Collections:	Thesis