High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength

標題:	High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelength
作者:	Kuo, HC Chang, YH Yao, HH Chang, YA Lai, FI Tsai, MY Wang, SC 光電工程學系 Department of Photonics
關鍵字:	characterization;InGaAsSb;laser diodes;metal-organic chemical vapor deposition (MOCVD);optical fiber devices;semiconducting
公開日期:	1-三月-2005
摘要:	1.27-mum InGaAs: Sb-GaAs-GaAsP vertical-cavity surface-emitting lasers (VCSELs) were grown by metal-organic chemical vapor deposition and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than similar to35% as the temperature raised from room temperature to 70 degreesC. With a bias current of only 5 mA, the 3-dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10-Gb/s operation. The maximal bandwidth is measured,to be 10.7 GHz with modulation current efficiency factor (MCEF) of similar to5.25 GHz/(mA)(1/2). These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25 degreesC to 70 degreesC.
URI:	http://dx.doi.org/10.1109/LPT.2004.840042 http://hdl.handle.net/11536/13969
ISSN:	1041-1135
DOI:	10.1109/LPT.2004.840042
期刊:	IEEE PHOTONICS TECHNOLOGY LETTERS
Volume:	17
Issue:	3
起始頁:	528
結束頁:	530
顯示於類別：	期刊論文

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