氮化鋁緩衝層的沉積條件對圖形化藍寶石基板磊晶氮化鎵的影響

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	古皓齊	zh_TW
dc.contributor.author	吳耀銓	zh_TW
dc.date.accessioned	2018-01-24T07:38:16Z	-
dc.date.available	2018-01-24T07:38:16Z	-
dc.date.issued	2016	en_US
dc.identifier.uri	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070161319	en_US
dc.identifier.uri	http://hdl.handle.net/11536/139698	-
dc.language.iso	zh_TW	en_US
dc.subject	氮化鋁	zh_TW
dc.subject	緩衝層	zh_TW
dc.subject	圖形化藍寶石基板	zh_TW
dc.subject	氮化鎵	zh_TW
dc.subject	AlN	en_US
dc.subject	Buffer Layer	en_US
dc.subject	Patterned Sapphire Substrate	en_US
dc.subject	GaN	en_US
dc.title	氮化鋁緩衝層的沉積條件對圖形化藍寶石基板磊晶氮化鎵的影響	zh_TW
dc.title	Effect of AlN Buffer Layer on the GaN Grown on Patterned Sapphire Substrate	en_US
dc.type	Thesis	en_US
dc.contributor.department	工學院半導體材料與製程設備學程	zh_TW
顯示於類別：	畢業論文