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dc.contributor.authorWang, WHen_US
dc.contributor.authorLin, YTen_US
dc.contributor.authorKuo, CTen_US
dc.date.accessioned2014-12-08T15:19:40Z-
dc.date.available2014-12-08T15:19:40Z-
dc.date.issued2005-03-01en_US
dc.identifier.issn0925-9635en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.diamond.2004.10.013en_US
dc.identifier.urihttp://hdl.handle.net/11536/13977-
dc.description.abstractA process to fabricate Co-assisted carbon nanocones (CNCs) was successfully developed by using microwave plasma chemical vapor deposition (MP-CVD). The nanostructures could be manipulated by adjusting the ratios of the source gases (CH4/H-2=5/80-15/80 sccm/sccm) and the substrate bias (0 similar to-300 V). The properties of deposited nanostructures were characterized by field emission scanning electron microscopy (FESEM), Raman Spectroscopy, auger electron spectroscopy (AES) spectra. The results show that the nanostructures with cone shape are resulted from competition between the ion bombardment rate and the growing speed of the nanostructures in the plasma, where ion bombardment is drove by the presence of negative substrate bias. In other words, a higher substrate negative bias (>-150 V) and a lower concentration of carbon species in the plasma are favorable conditions to grow highly oriented CNCs due to a greater ion bombardment energy and lower lateral growth rate of the nanostructures, respectively. The results indicate that CNCs synthesized under the applied bias of -300 V show an excellent performance in field emission current density (up to similar to 173 mA/cm(2) at 10 V/mu m). (c) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectmicrowave plasma (MP)en_US
dc.subjectchemical vapor deposition (CVD)en_US
dc.subjectcarbon nanocones (CNCs)en_US
dc.subjectfield emission (FE)en_US
dc.titleNanofabrication and properties of the highly oriented carbon nanoconesen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.diamond.2004.10.013en_US
dc.identifier.journalDIAMOND AND RELATED MATERIALSen_US
dc.citation.volume14en_US
dc.citation.issue3-7en_US
dc.citation.spage907en_US
dc.citation.epage912en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000229751400128-
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