Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 高仲均 | zh_TW |
| dc.contributor.author | 張翼 | zh_TW |
| dc.contributor.author | Kao, Chung-Chun | en_US |
| dc.contributor.author | Chang, Edward-Yi | en_US |
| dc.date.accessioned | 2018-01-24T07:38:24Z | - |
| dc.date.available | 2018-01-24T07:38:24Z | - |
| dc.date.issued | 2015 | en_US |
| dc.identifier.uri | http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070251543 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/139807 | - |
| dc.language.iso | en_US | en_US |
| dc.subject | 低壓化學氣相沉積 | zh_TW |
| dc.subject | 氮化矽 | zh_TW |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | 高電子遷移率電晶體 | zh_TW |
| dc.subject | 高頻特性 | zh_TW |
| dc.subject | LPCVD | en_US |
| dc.subject | Silicon Nitride | en_US |
| dc.subject | GaN | en_US |
| dc.subject | HEMT | en_US |
| dc.subject | RF Characteristic | en_US |
| dc.title | 藉低壓化學氣相沉積成長氮化矽鈍化層改善氮化鎵高電子遷移率電晶體直流與高頻特性之研究 | zh_TW |
| dc.title | Study of DC and RF Characteristic Improvements on GaN HEMTs by LPCVD Grown Silicon Nitride Passivation | en_US |
| dc.type | Thesis | en_US |
| dc.contributor.department | 材料科學與工程學系所 | zh_TW |
| Appears in Collections: | Thesis | |
