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dc.contributor.author林君豪zh_TW
dc.contributor.author陳煜璋zh_TW
dc.contributor.authorLin, Jun-Haoen_US
dc.contributor.authorChen, Yu-Changen_US
dc.date.accessioned2018-01-24T07:38:38Z-
dc.date.available2018-01-24T07:38:38Z-
dc.date.issued2016en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070352065en_US
dc.identifier.urihttp://hdl.handle.net/11536/139903-
dc.description.abstract本文在密度泛函理論的架構下,發展出一套以第一原理計算金屬-真空-金屬奈米接面系統電子結構的方法。接面系統中金屬的原子核正電荷以凝膠模型近似,並在要求系統電中性的束制下,自洽去解等效單電子系統的耦合帕松方程式與薛丁格方程式,其中交換相關能的部分採用局域密度近似方法(Local Density Approximation)。論文中研究了Wigner-Seitz Radius為2到6的金屬電極,分別計算左右電極為相同金屬及左右電極為不同金屬的接面系統,並比較其在不同真空層寬度、不同外加偏壓,以及加入介電值對系統電子結構的影響。計算所得之電子密度和位能都有顯著的夫里德耳振盪,此振盪大幅增加計算收斂難度。結果發現對系統施以外加偏壓時,在兩個表面間有電荷轉移的現象發生以及在不同金屬組成的接面系統中,左右電極存在一內在感應電位差。zh_TW
dc.description.abstractWithin the framework of density-functional theory (DFT), the electronic structure of bimetal junctions is calculated by a first-principles method. The positive charges of metals are modeled as a uniform positive background (Jellium model). The method solves the coupled Poisson and Schrödinger equations iteratively with the constraints of the charge neutrality. The exchange-correlation functional of the effective single-particle system is approximated by the local density approximation (LDA). The self-consistent electron structures are obtained for identical and dissimilar contacts with r_s=2~6 . Junctions with different separations and external biases are compared. And we considered the effect when we added insulator materials between two electrodes.There exist substantial Friedeloscillations in densities and potential energies. Charge transfer between two electrodes occurs when an external bias is applied. An intrinsic voltage differenceis generated by the contact of dissimilar metals.en_US
dc.language.isozh_TWen_US
dc.subject介電質zh_TW
dc.subjectbimetal junctionen_US
dc.title不同電極異質結構產生的電荷轉移、電位差與電流zh_TW
dc.titleCharge transfer,current,and voltage induced by heterjunction connected to electrodes formed by different materialsen_US
dc.typeThesisen_US
dc.contributor.department電子物理系所zh_TW
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