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dc.contributor.authorLeu, CCen_US
dc.contributor.authorChien, CHen_US
dc.contributor.authorChen, CYen_US
dc.contributor.authorChang, MNen_US
dc.contributor.authorHsu, FYen_US
dc.contributor.authorHu, CTen_US
dc.contributor.authorChen, YFen_US
dc.date.accessioned2014-12-08T15:19:42Z-
dc.date.available2014-12-08T15:19:42Z-
dc.date.issued2005-02-28en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1879089en_US
dc.identifier.urihttp://hdl.handle.net/11536/13994-
dc.description.abstractIn this letter, we demonstrated the impact of illumination on the differential capacitance variation of a strontium bismuth tantalite (SBT) capacitor during scanning capacitance microscopy measurements. It was found that illumination with a stray light of laser in an atomic force microscope could perturb the dC/dV signals of the samples. We attribute this phenomenon to the generation of free carriers by the photon absorptions via defect traps in the SBT thin film. Therefore, this present work suggests that the effect of laser illumination must be carefully taken into consideration whenever a field-sensitive technique is employed to analyze the properties of a ferroelectric material. (C) 2005 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleVariations of differential capacitance in SrBi2Ta2O9 ferroelectric films induced by photoperturbationen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1879089en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume86en_US
dc.citation.issue9en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000228991600050-
dc.citation.woscount5-
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