經電荷調變之能帶對氮化鎵金屬絕緣層半導體高電子遷移率電晶體元件特性影響之研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	黃崇愷	zh_TW
dc.contributor.author	張翼	zh_TW
dc.contributor.author	施敏	zh_TW
dc.contributor.author	Huang, Chung-Kai	en_US
dc.contributor.author	Chang, Edward Yi	en_US
dc.contributor.author	Sze, Simon Min	en_US
dc.date.accessioned	2018-01-24T07:38:51Z	-
dc.date.available	2018-01-24T07:38:51Z	-
dc.date.issued	2016	en_US
dc.identifier.uri	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070250112	en_US
dc.identifier.uri	http://hdl.handle.net/11536/140026	-
dc.language.iso	en_US	en_US
dc.subject	氮化鎵	zh_TW
dc.subject	金屬絕緣層半導體高電子遷移率電晶體	zh_TW
dc.subject	氮氧化矽	zh_TW
dc.subject	鐵電材料	zh_TW
dc.subject	能帶調變	zh_TW
dc.subject	GaN	en_US
dc.subject	MIS-HEMT	en_US
dc.subject	SiON	en_US
dc.subject	Ferroelectric	en_US
dc.subject	Energy Band Modulation	en_US
dc.title	經電荷調變之能帶對氮化鎵金屬絕緣層半導體高電子遷移率電晶體元件特性影響之研究	zh_TW
dc.title	Study of Device Performance with Charge-induced Energy Band Modulation in GaN MIS-HEMTs	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子研究所	zh_TW
顯示於類別：	畢業論文