三氧化鎢奈米粒子或奈米柱引入碳酸銫/苯基碳六十丁酸甲酯之雙層緩衝層作為載子傳輸材料以應用於鈣鈦礦太陽能電池

Abstract

本研究提出一種新穎且由三氧化鎢奈米材料與碳酸銫/苯基碳六十丁酸甲酯雙層緩衝層組成之載子傳輸層以製作鈣鈦礦太陽能電池元件。本研究採用溶液凝膠法與水熱法製作兩種不同型態的三氧化鎢結構，包含奈米粒子和奈米柱。碳酸銫/苯基碳六十丁酸甲酯雙層緩衝層被引入三氧化鎢和鈣鈦礦主動層之間以提升載子傳輸效率，並形成無孔洞之鈣鈦礦層。除此之外，引入上述的雙層緩衝層能有效地抑制鈣鈦礦太陽能電池之漏電流。最佳元件結構為使用三氧化鎢奈米粒子層結合碳酸銫/苯基碳六十丁酸甲酯雙層緩衝層，其開路電壓為0.84 V，短路電流密度為20.4 mA/cm2，填充因子為0.61，功率轉換效率為10.49%，其元件表現遠高於未引入碳酸銫/苯基碳六十丁酸甲酯雙層緩衝層之鈣鈦礦太陽能元件，此研究成果展現三氧化鎢奈米材料結合碳酸銫/苯基碳六十丁酸甲酯雙層緩衝層能有效改善鈣鈦礦太陽能元件之表現。

We propose a novel carrier transporting layer composed of tungsten trioxide (WO3) nanomaterials and cesium carbonate (Cs2CO3)/ [6,6]-phenyl-C60-butyric acid methyl ester (PCBM) buffer bilayer for the fabrication of perovskite solar cells (PSCs). Two different types of WO3, including nanoparticles and nanorods, were prepared by sol-gel process and hydrothermal method, respectively. Cs2CO3/PCBM buffer bilayer was inserted between WO3 and perovskite layers to improve carriers transfer efficiency and to form pinhole-free perovskite layer. Besides, the leakage current of the device containing Cs2CO3/PCBM buffer bilayer was effectively suppressed. The best device based on WO3 nanoparticles and Cs2CO3/PCBM buffer bilayer showed an open-circuit voltage of 0.84 V, a short-circuit current density of 20.4 mA/cm2, a fill factor of 0.61, and a power conversion efficiency of 10.49%, which were significantly higher than those of PSCs without Cs2CO3/PCBM buffer bilayer. The results revealed effective improvement in the performance of PSCs based on the combination of WO3 nanomaterials and Cs2CO3/PCBM buffer bilayer.