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dc.contributor.author蔡宗霖zh_TW
dc.contributor.author曾俊元zh_TW
dc.contributor.authorTsai, Tsung-Lingen_US
dc.date.accessioned2018-01-24T07:38:57Z-
dc.date.available2018-01-24T07:38:57Z-
dc.date.issued2016en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT079911544en_US
dc.identifier.urihttp://hdl.handle.net/11536/140154-
dc.language.isozh_TWen_US
dc.subject電阻式記憶體zh_TW
dc.subject氧化鋯zh_TW
dc.subjectzh_TW
dc.subjectresistive switching memoryen_US
dc.subjectZrO2en_US
dc.subjectthermalen_US
dc.title氧化鋯電阻式記憶體元件之熱相關研究zh_TW
dc.titleThe Thermal-Related Study on ZrO2-Based Resistive Switching Memory Devicesen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
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