高功率半導體量子井及量子點雷射最佳共振腔長度之研究

Abstract

本論文利用共晶鍵結融合技術將雷射二極體晶粒封裝在 CuW 材質的 C-mount。然後針對量子井及量子點雷射之光電特性進行測量與分析，並討論功率轉換效率（PCE）對共振腔長度的關係，以決定共振腔長度之最佳值。 首先在晶粒封裝製程上，選用了 AuSn 的焊料，利用 EDS 了解其封裝前後焊料之元素組成及相態變化，再藉由光性量測、X-Ray、SAM 以及推力測試去評估封裝條件的優劣，並且進行暫態熱阻的量測，得知國內光電公司 915 nm 的InGaAs 單層量子井雷射封裝於 C-mount 後的整體熱阻小於 2 K/W，也證明了實驗室封裝技術相當成熟。 再來藉由國內光電公司生產之 915-nm 及 808-nm 高功率半導體量子井雷射，及實驗室 MBE 磊晶的量子點雷射元件，探討功率分布比例隨電流的變化關係，得知元件熱消耗的情形，最後分析量子井及量子點的最佳效率共振腔長度，驗證實驗量測值與推導之理論公式相當符合，並探究各項內部參數對最佳效率共腔長的影響，藉由此推導公式可得出不同內部參數的雷射其最佳化腔長。

This thesis studies the bonding thechnique of semiconductor laser by using CuW C-mount. By measuring and analyzing the optical and electrical characteristic of quantum well (QW) and quantum dot (QD) laser , the relation between power conversion efficiency (PCE) and cavity length can be concluded and thus one can obtain the optimum cavity length of the laser. AuSn solder have been used during the process of die bonding. The composition and phase transition of the solder can be observed by utilizing EDS before and after bonding process.Also , the bonding quality can be evaluated by using X-ray , SEM and die shear test. The thermal resistance of the 915-nm InGaAs single quantum well laser bonded on C-mount , which is fabricated by optoelectric company in Taiwan , is less than 2 K/W , which reveals that the bonding technique is quite well. The power budget , which is related to the heat dissipation of the device , have been shown by utilizing the 915-nm and 808-nm high power quantum well diode lasers fabricated by optoelectric company and the quantum dot lasers grown by MBE system from our labarotary. The optimum cavity length is affacted by the extracted parameters of the laser. One can obatain the optimum cavity length by deriving the optimization function. Results show that the actual value is quite consistent with the theoretical value.