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dc.contributor.author何任詮zh_TW
dc.contributor.author荊鳳德zh_TW
dc.contributor.authorHe, Ren-Chiuanen_US
dc.contributor.authorAlbert, Chinen_US
dc.date.accessioned2018-01-24T07:40:12Z-
dc.date.available2018-01-24T07:40:12Z-
dc.date.issued2017en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070450151en_US
dc.identifier.urihttp://hdl.handle.net/11536/141071-
dc.language.isoen_USen_US
dc.subjectp型氧化亞錫薄膜電晶體zh_TW
dc.subject高載子遷移率zh_TW
dc.subject紫外光照射zh_TW
dc.subject應力效果zh_TW
dc.subject高介電常數閘極介電質zh_TW
dc.subject薄膜電晶體zh_TW
dc.subjectp-type SnO TFTen_US
dc.subjecthigh carrier mobilityen_US
dc.subjectUV exposureen_US
dc.subjectstrain effecten_US
dc.subjectHigh K gate dielectricen_US
dc.subjectthin film transistoren_US
dc.title紫外光的曝曬及結構性變化對於p型氧化亞錫薄膜電晶體之特性影響zh_TW
dc.titleInfluences of Ultraviolet Exposure and Structural Changes on the Characteristics of p-Type SnO Thin Film Transistorsen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
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