高效能低操作偏壓非晶氧化銦鎢薄膜電晶體之研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	張建民	zh_TW
dc.contributor.author	劉柏村	zh_TW
dc.contributor.author	Chang, Chien-Min	en_US
dc.contributor.author	Liu, Po-Tsun	en_US
dc.date.accessioned	2018-01-24T07:41:22Z	-
dc.date.available	2018-01-24T07:41:22Z	-
dc.date.issued	2017	en_US
dc.identifier.uri	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070450530	en_US
dc.identifier.uri	http://hdl.handle.net/11536/141759	-
dc.language.iso	en_US	en_US
dc.subject	非晶氧化物半導體	zh_TW
dc.subject	氧化銦鎢薄膜電晶體	zh_TW
dc.subject	超薄通道元件	zh_TW
dc.subject	無接面元件	zh_TW
dc.subject	低操作偏壓	zh_TW
dc.subject	Amorphous Oxide Semiconductors	en_US
dc.subject	Indium tungsten oxide thin film transistor	en_US
dc.subject	Ultra-thin body device	en_US
dc.subject	Junctionless device	en_US
dc.subject	low operation voltage	en_US
dc.title	高效能低操作偏壓非晶氧化銦鎢薄膜電晶體之研究	zh_TW
dc.title	Study on High Performance Amorphous Indium Tungsten Oxide Thin Film Transistors with Low Operation Voltage	en_US
dc.type	Thesis	en_US
dc.contributor.department	光電工程研究所	zh_TW
顯示於類別：	畢業論文