The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source

doi:10.1109/55.485176

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, CT	en_US
dc.contributor.author	Lei, TF	en_US
dc.contributor.author	Chu, CH	en_US
dc.contributor.author	Shvu, SH	en_US
dc.date.accessioned	2014-12-08T15:02:47Z	-
dc.date.available	2014-12-08T15:02:47Z	-
dc.date.issued	1996-03-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.485176	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1420	-
dc.description.abstract	The electrical characteristics of ultra-shallow p(+)/n junctions formed by implanting a 60 keV Ge+ into a TiSi2 layer have been studied. A very low reverse leakage current density (congruent to 0.4 nA/cm(2) at -5 V) and a very good forward ideality factor n (congruent to 1.001) were achieved in these ultra-shallow p(+)/n junctions, From the secondary ion mass spectrometry (SIMS) analysis, the junction depth was measured to be 600 Angstrom and the surface concentration was about 3 times higher than that of the conventional samples.	en_US
dc.language.iso	en_US	en_US
dc.title	The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.485176	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	17	en_US
dc.citation.issue	3	en_US
dc.citation.spage	88	en_US
dc.citation.epage	90	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1996TX68200003	-
dc.citation.woscount	6	-
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