源/汲極活化與磷離子擴散行為對連續波雷射結 晶之N型多晶鍺薄膜電晶體之研究

標題:	源/汲極活化與磷離子擴散行為對連續波雷射結晶之N型多晶鍺薄膜電晶體之研究 Study on the S/D Activation and Phosphorus Diffusion Condition for the N-Channel Polycrystalline-Germanium Thin-Film Transistors via Continuous Wave Laser Crystallization
作者:	梁皓翔鄭晃忠 Liang, Hao-Hsiang Cheng, Huang-Chung 電子研究所
關鍵字:	磷離子擴散;多晶鍺薄膜電晶體;連續波雷射結晶;源/汲極活化;綠光奈秒脈衝雷射退火;Phosphorus Diffusion;Polycrystalline-Germanium Thin-Film Transistors;Continuous Wave Laser Crystallization;green nano-second laser annealing
公開日期:	2017
URI:	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070450166 http://hdl.handle.net/11536/142264
顯示於類別：	畢業論文