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dc.contributor.author黃煒勛zh_TW
dc.contributor.author林聖迪zh_TW
dc.contributor.author蔡嘉明zh_TW
dc.contributor.authorHuang, Wei-Syunen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorTsai, Chia-Mingen_US
dc.date.accessioned2018-01-24T07:42:34Z-
dc.date.available2018-01-24T07:42:34Z-
dc.date.issued2017en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070450183en_US
dc.identifier.urihttp://hdl.handle.net/11536/142673-
dc.description.abstract在此論文中我們使用台積電0.18微米高壓標準CMOS製程製作的單光子累增崩潰二極體元件,搭配外部被動截止、主動回復電路, 設計出死亡時間為2奈秒~30奈秒可調的光偵測器。除了單一pixel,我們亦將單光子偵測器做成6x4的陣列以增加收光的面積。結合雷射與光路設計,實現測量距離的功能。此外我們將結果整理並進一步分析,比較單顆和6x4陣列的測距結果優劣,因為死亡時間大幅縮短的關係,可以預估與死亡時間有高度相依性的二次崩潰機率會上升,因此我們也做了二次崩潰機率的量測與探討。在此測距系統,我們使用repetition rate為1 MHz,波長為780 nm的脈衝雷射,在極短的積分時間內完成100公尺的測量,且最大誤差值在千分之二內。這些結果顯示,SPAD有高度潛力與自動緊急煞車(AEB)系統結合並應用在汽車自動駕駛上。zh_TW
dc.description.abstractIn this work, we realize a photodetector whose deadtime is controllable from 2 ns~30 ns with an external passive quenching and active reset circuit by using single photon avalanche diodes (SPADs) applying TSMC 0.18 m HV standard CMOS technology. In addition to single pixel, we also complete a 6x4 pixel array made of SPADs tape-out to increase light absorption area. This system composed of the chip, laser and optical path design demonstrates a range-finding function. In addition, we finish the results and analysis them further, then compare the range detection of the single device with the 6x4 pixel array. Because of the shortening of deadtime, we can estimate that afterpulsing probability(app) which is highly correlated to deadtime will increase. Then we do the experiment about app to analysis. In this LIDAR system, we use pulse laser whose reputation rate is 1 MHz and its wavelength is 780 nm. We complete the detection of 100 meter in the short integration time, and the maximum deviation value is less than 0.2%. These results demonstrate that SPAD has great potential for combining it with Autonomous Emergency Braking system which can be applied to autonomous cars.en_US
dc.language.isozh_TWen_US
dc.subject單光子偵測器zh_TW
dc.subject矽光電倍增器zh_TW
dc.subject被動截止zh_TW
dc.subject主動回復zh_TW
dc.subject二次崩潰zh_TW
dc.subject測距zh_TW
dc.subject光達zh_TW
dc.subject二迴聲zh_TW
dc.subjectSPADen_US
dc.subjectSiPMen_US
dc.subjectpassive quenchingen_US
dc.subjectactive reseten_US
dc.subjectafter-pulsingen_US
dc.subjectrangeren_US
dc.subjectLIDARen_US
dc.subjecttwo-echoen_US
dc.title基於極短死亡時間主動回復截止電路之矽光電倍增器zh_TW
dc.titleSilicon Photomultiplier Based on Short Deadtime Active Reset Quenching Circuiten_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
Appears in Collections:Thesis