以”薄膜輪廓工法”研製金屬氧化物薄膜電晶體及反向器

標題:	以”薄膜輪廓工法”研製金屬氧化物薄膜電晶體及反向器 Fabrication of Metal-Oxide Thin-Film Transistors and Inverters with “Film Profile Engineering”
作者:	呂榮哲林鴻志黃調元 Lyu, Rong-Jhe Lin, Horng-Chih Huang, Tiao-Yuan 電子工程學系電子研究所
關鍵字:	金屬氧化物;薄膜電晶體;薄膜輪廓工法;氧化鋅;氧化銦鎵鋅;載子遷移率;開關電流比;次臨界擺幅;積體電路後段主動元件;源極汲極串聯電阻;短通道效應;轉換電導;邏輯閘;三維;反向器;臨界電壓;電壓轉換曲線;雜訊容限;照光穩定性;Metal Oxide (MO);Thin-Film Transistor (TFT);Film-Profile Engineering (FPE);ZnO;InGaZnO4 (IGZO);Mobility;On/Off Current Ratio (ION/IOFF);Subthreshold Slope (SS);Back-End-Of-Line (BEOL);Source/Drain Series Resistance (RSD);Short-Channel Effect;Transconductance (GM);Logic Gate, 3-Dimensional (3D);Inverter;Threshold Voltage (VTH);Voltage Transfer Curve (VTC);Noise Margin;Light-Induced Instability
公開日期:	2016
URI:	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070080106 http://hdl.handle.net/11536/143170
Appears in Collections:	Thesis