| 標題: | 以”薄膜輪廓工法”研製金屬氧化物薄膜電晶體及反向器 Fabrication of Metal-Oxide Thin-Film Transistors and Inverters with “Film Profile Engineering” |
| 作者: | 呂榮哲 林鴻志 黃調元 Lyu, Rong-Jhe Lin, Horng-Chih Huang, Tiao-Yuan 電子工程學系 電子研究所 |
| 關鍵字: | 金屬氧化物;薄膜電晶體;薄膜輪廓工法;氧化鋅;氧化銦鎵鋅;載子遷移率;開關電流比;次臨界擺幅;積體電路後段主動元件;源極汲極串聯電阻;短通道效應;轉換電導;邏輯閘;三維;反向器;臨界電壓;電壓轉換曲線;雜訊容限;照光穩定性;Metal Oxide (MO);Thin-Film Transistor (TFT);Film-Profile Engineering (FPE);ZnO;InGaZnO4 (IGZO);Mobility;On/Off Current Ratio (ION/IOFF);Subthreshold Slope (SS);Back-End-Of-Line (BEOL);Source/Drain Series Resistance (RSD);Short-Channel Effect;Transconductance (GM);Logic Gate, 3-Dimensional (3D);Inverter;Threshold Voltage (VTH);Voltage Transfer Curve (VTC);Noise Margin;Light-Induced Instability |
| 公開日期: | 2016 |
| URI: | http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070080106 http://hdl.handle.net/11536/143170 |
| 顯示於類別： | 畢業論文 |
- 薄膜輪廓工法之非晶銦鎵鋅氧薄膜電晶體之研製與分析 / 謝博璿;林鴻志;黃調元;Shie, Bo-Shiuan;Lin, Horng-Chih
- P型金氧半場效電晶體與薄膜輪廓工法之氧化鋅薄膜電晶體之單片整合製作與特性研究 / 吳宗易;林鴻志;Wu, Tzong-Yi;Lin, Horng-Chih
- Effects of Gate Dielectric and Process Treatments on the Electrical Characteristics of IGZO TFTs With Film Profile Engineering / Shie, Bo-Shiuan;Lin, Horng-Chih;Lyu, Rong-Jye;Huang, Tiao-Yuan
- Fabrication and Characterization of Film Profile Engineered ZnO TFTs With Discrete Gates / Lyu, Rong-Jhe;Lin, Horng-Chih;Huang, Tiao-Yuan
- Implementation of Film Profile Engineering in the Fabrication of ZnO Thin-Film Transistors / Lyu, Rong-Jhe;Lin, Horng-Chih;Huang, Tiao-Yuan
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