标题: 应用在氮化镓高电子迁移率电晶体的铜闸极金属阻障层之研究
Study of Cu Barrier Layers for Gate Metal on GaN High Electron Mobility Transistors Application
作者: 李芳茗
张翼
工学院半导体材料与制程设备学程
关键字: 氮化镓;铜闸极;阻障层;氮化钛;氮化钨;GaN;Cu gate;Barrier Layers;TiN;WNx
公开日期: 2015
摘要: 本论文探讨使用氮化钛(TiN)和氮化钨(WNx)作为扩散阻挡层的铜闸极于高功率氮化铝镓(AlGaN)/氮化镓(GaN)的高电子迁移率电晶体(High Electron Mobility Transistors, HEMTs)闸极金属(gate metal scheme)之应用。使用铜制程闸极之元件和传统镍(Ni)/金(Au)闸极元件有相近的直流特性。在VDS=200V, VGS=-5V的偏压条件应力(stress)测试下有优异的性能,其IDS和IGS并没有显着的改变。而在摄氏250度下,经1小时的热稳定性测试(thermal stability test)后,使用氮化钛(TiN)/铜(Cu)和氮化钨(WNx)/铜(Cu)作为闸极金属的萧基能障高度(Schottky barrier height)也和传统镍(Ni)/金(Au)相似。总的来说,以氮化钛(TiN)/铜(Cu)和氮化钨(WNx)/铜(Cu)作为高功率氮化铝镓(AlGaN)/氮化镓(GaN)的高电子迁移率电晶体(HEMTs)之闸极金属的元件,在高偏压之stress测试中,显示出优异的直流特性、热稳定性、稳定的电性表现。
In this study, the copper gate metal with the titanium nitride (TiN) and tungsten nitride (WNx) as a diffusion barrier layer on AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated for high power application. To compare with the Ni/Au gate metal on AlGaN/GaN HEMTs, the Copper gate metal on AlGaN/GaN HEMTs was shown a similar direct-current (DC) characteristics. Moreover, the IDS and IGS characteristics of the Copper gate metal device were not significant reduction when measure at drain-source voltage of 200 volt and gate-source of -6 volt. Furthermore, the copper gate metal with the titanium nitride (TiN) and tungsten nitride (WNx) as a diffusion barrier layer on AlGaN/GaN HEMTs was shown DC properties similar to the Ni/Au gate metal on AlGaN/GaN HEMTs when measure the thermal stability test at 250 ℃for 1 hour. From the above results, the AlGaN/GaN HEMTs with the gate metal of the TiN/Cu and WNx/Cu was shown excellent DC characteristics, good thermal stability, and stable electrical performance at high bias stress testing.
URI: http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT079975515
http://hdl.handle.net/11536/143203
显示于类别:Thesis