單層二硒化鎢電晶體：元件製作與變偏壓下之光學特性

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	黃偉萍	zh_TW
dc.contributor.author	張文豪	zh_TW
dc.contributor.author	Huang, Wei-Ping	en_US
dc.contributor.author	Chang, Wen-Hao	en_US
dc.date.accessioned	2018-01-24T07:43:18Z	-
dc.date.available	2018-01-24T07:43:18Z	-
dc.date.issued	2015	en_US
dc.identifier.uri	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070252062	en_US
dc.identifier.uri	http://hdl.handle.net/11536/143303	-
dc.language.iso	zh_TW	en_US
dc.subject	二硒化鎢	zh_TW
dc.subject	電晶體	zh_TW
dc.subject	過渡金屬二硫族化物	zh_TW
dc.subject	二維材料	zh_TW
dc.subject	Tungsten diselenide	en_US
dc.subject	field-effect transistor	en_US
dc.subject	transition metal dichogenide	en_US
dc.subject	two-dimensional material	en_US
dc.title	單層二硒化鎢電晶體：元件製作與變偏壓下之光學特性	zh_TW
dc.title	Monolayer WSe2 field effect transistor：Device fabrication and bias dependent optical properties	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子物理系所	zh_TW
顯示於類別：	畢業論文