含噻吩共軛高分子應用於 鈣鈦礦太陽能電池之電洞傳導層

Abstract

本研究選用兩種以噻吩環為主之共軛高分子PQT-12和PBTTT-14，以及兩種以DPP結構為主之共軛高分子PDQT和PDBT-co-TT作為鈣鈦礦太陽能電池之電洞傳導層。當摻雜4-三級丁基吡啶和鋰鹽後，PQT-12和PBTTT-14之電洞傳導率分別為和2.44×〖10〗^(-4) 和2.83×〖10〗^(-3) cm2 v-1s-1，而未摻雜之PDQT和PDBT-co-TT之電洞遷移率則分別為0.513和1.11 cm2 v-1s-1。這四種共軛高分子分別應用於具有下列結構之鈣鈦礦太陽能電池：ITO / ZnO / Perovskite / HTL / Au，含有摻雜PQT-12和PBTTT-14電洞傳導層之鈣鈦礦太陽能電池，其能量轉換率分別為6.8%和10.5%，而含PBTTT-14電洞傳導層之元件，若於ZnO表面加入可交聯碳六十衍生物PCBSD，則元件效率可率提升至11.8%。此外，含未摻雜之PDQT和PDBT-co-TT電洞傳輸層之鈣鈦礦太陽能電池，其能量轉換效率分別為5.76%與9.31%。而含有PDBT-co-TT層之元件，當加入PCBSD層後，其效率可以提升至11.04%。據瞭解這是所有未摻雜平面型鈣鈦礦太陽能電池中最高的效率。

In this study, two thiophene based polymers , i.e. poly[bis(3-dodecyl-2-thienyl)-2,2'-dithiophene -5,5'-diyl] (PQT-12) and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-14) , and two diketopyrrolopyrrole (DPP) based polymers, i.e. , poly{2,2'-[(2,5-bis(2-octyldodecyl)-3,6-dioxo-2,3,5,6-tetrahydropyrrolo[3,4-c ]pyrrole-1,4-diyl)]dithiophene-5,5'-diyl-alt-2,2'-bithiophene-5,5'-diyl} (PDQT) and poly{2,2'-[(2,5-bis(2-octyldodecyl)-3,6-dioxo-2,3,5,6-tetrahydropyrrolo[3,4-c ]pyrrole-1,4-diyl)]dithiophene-5,5'-diyl-alt-thieno[3,2-b ]thiophen-2,5-diyl} (PDBT-co-TT) were used as hole transporting layers in perovskite solar cells. By doping with 4-tertbutylpyridine and lithium-bis(trifluoromethanesulfonyl)imide , PQT-12 and PBTTT-14 show a hole mobility of 2.44×〖10〗^(-4) and 2.83×〖10〗^(-3) cm2 v-1s-1 respectively, while undoped PDQT and PDBT-co-TT have a hole mobility of 0.513 and 1.11 cm2 v-1s-1 respectively. Four polymers were used as hole transporting layers (HTLs) in perovskite solar cells with the configuration of ITO / ZnO / Perovskite / HTL / Au . The device containing doped PQT-12 and PBTTT-14 layers have a PCE value of 6.8% and 10.5% respectively. When applying a crosslinkable PCBSD layer on the top of ZnO, the PCE value of the device with PBTTT-14 layer will reach 11.8%. Both devices with undoped PDQT and PDBT-co-TT layers show a PCE value of 5.76% and 9.31%. The device containing PDBT-co-TT layer was optimized with a crosslinkable PCBSD layer on the top of ZnO. Its PCE value will further reach 11.04% which is the highest value for a dopant free perovskite solar cell with planar structure.