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dc.contributor.authorKao, Hsuan-Yunen_US
dc.contributor.authorChi, Yu-Chiehen_US
dc.contributor.authorTsai, Cheng-Tingen_US
dc.contributor.authorLeong, Shan-Fongen_US
dc.contributor.authorPeng, Chun-Yenen_US
dc.contributor.authorWang, Huai-Yungen_US
dc.contributor.authorHuang, Jian Jangen_US
dc.contributor.authorJou, Jau-Jien_US
dc.contributor.authorShih, Tien-Tsorngen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorCheng, Wood-Hien_US
dc.contributor.authorWu, Chao-Hsinen_US
dc.contributor.authorLin, Gong-Ruen_US
dc.date.accessioned2018-08-21T05:52:39Z-
dc.date.available2018-08-21T05:52:39Z-
dc.date.issued2017-10-01en_US
dc.identifier.issn2327-9125en_US
dc.identifier.urihttp://dx.doi.org/10.1364/PRJ.5.000507en_US
dc.identifier.urihttp://hdl.handle.net/11536/143849-
dc.description.abstractA few-mode (FM) vertical cavity surface emitting laser (VCSEL) chip with heavily zinc-diffused contact layer and oxide-confined cross-section is demonstrated for carrying pre-leveled 16-quadrature amplitude modulation orthogonal frequency division multiplexing (QAM-OFDM) data in OM4 multi-mode fiber (MMF) over 100 m for intra-data-center applications. The FM VCSEL chip, which has an oxide-confined emission aperture of 5 mu m, demonstrates high external quantum efficiency, provides an optical power of 2.2 mW at 38 times threshold condition, and exhibits 3 dB direct-modulation bandwidth beyond 22 GHz at a cost of slight heat accumulation. At a DC bias point of 5 mA (22.6I(th)) the FM VCSEL chip, with sufficiently normalized modulation output, supports Baud and data rates of 25 and 100 Gb/s, respectively, with forward error correction (FEC) certifying receiving quality after back-to-back transmission. After passing through 100 m OM4 MMF with a receiving power penalty of 4 dB, the FM VCSEL chip demonstrates FEC-certified transmission of the pre-leveled 16-QAM OFDM data at 92 Gb/s. (C) 2017 Chinese Laser Pressen_US
dc.language.isoen_USen_US
dc.titleFew-mode VCSEL chip for 100-Gb/s transmission over 100 m multimode fiberen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/PRJ.5.000507en_US
dc.identifier.journalPHOTONICS RESEARCHen_US
dc.citation.volume5en_US
dc.citation.spage507en_US
dc.citation.epage515en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000412011400019en_US
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