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dc.contributor.authorLin, Alberten_US
dc.contributor.authorParashar, Paragen_US
dc.contributor.authorYang, Chih-Chiehen_US
dc.contributor.authorJian, Ding Rungen_US
dc.contributor.authorHuang, Wei-Mingen_US
dc.contributor.authorHuang, Yi-Wenen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2019-04-03T06:41:59Z-
dc.date.available2019-04-03T06:41:59Z-
dc.date.issued2017-10-01en_US
dc.identifier.issn2159-3930en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OME.7.003608en_US
dc.identifier.urihttp://hdl.handle.net/11536/143852-
dc.description.abstractIn this work, thin Ti nanocones are deposited on top of the arrays of ZnO nanopagodas, and the whole structure works as an efficient nanostructured metamaterial perfect absorber (MPA) without using lithography and dry etching. In this design, similar to 1 mu m long ZnO nanopagoda arrays are grown on a 100 nm ZnO buffer layer over the silicon/glass substrate by a treatment with an aqueous solution of L-ascorbic acid. Growth direction and the degree of lamination in the ZnO nanostructures can be easily controlled by adjusting the concentration of L-ascorbic acid. Afterward, these ZnO nanopagodas are coated with a 30nm thin top and a 500nm thick bottom layer of Ti to achieve the proposed nanocone resonant cavity structure with electromagnetic wave field penetration. The overall structure encapsulates three physical concepts, namely, field penetration, adiabatic coupling and cavity resonance, which contribute the broadband perfect absorption. The entire process is carried out at a low temperature (< 90 degrees). We believe the proposed tapered Ti nanocones MPA structure facilitates ultra-broadband perfect spectral absorption with promising nature of low-cost, large-area, and lithography-free. (C) 2017 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleLithography-free thin-titanium-nanocone metamaterial perfect absorbers using ZnO nanostructuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OME.7.003608en_US
dc.identifier.journalOPTICAL MATERIALS EXPRESSen_US
dc.citation.volume7en_US
dc.citation.issue10en_US
dc.citation.spage3608en_US
dc.citation.epage3617en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000412046800014en_US
dc.citation.woscount1en_US
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