標題: | AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer |
作者: | Liu, Xinke Gu, Hong Li, Kuilong Guo, Lunchun Zhu, Deliang Lu, Youming Wang, Jianfeng Kuo, Hao-Chung Liu, Zhihong Liu, Wenjun Chen, Lin Fang, Jianping Ang, Kah-Wee Xu, Ke Ao, Jin-Ping 光電工程學系 光電工程研究所 Department of Photonics Institute of EO Enginerring |
公開日期: | 1-九月-2017 |
摘要: | This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (similar to 10(4)-10(5) cm(-2)) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (similar to 60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility mu(eff) of similar to 1456 cm(2)V(-1)s(-1). Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaNHEMTsare promising candidate for next generation high power device applications. (C) 2017 Author(s). |
URI: | http://dx.doi.org/10.1063/1.4999810 http://hdl.handle.net/11536/143857 |
ISSN: | 2158-3226 |
DOI: | 10.1063/1.4999810 |
期刊: | AIP ADVANCES |
Volume: | 7 |
Issue: | 9 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |