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dc.contributor.authorChiang, Hsiao-Chengen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLiao, Po-Yungen_US
dc.contributor.authorChen, Bo-Weien_US
dc.contributor.authorTsao, Yu-Chingen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorChien, Yu-Chiehen_US
dc.contributor.authorYang, Yi-Chiehen_US
dc.contributor.authorChen, Kuan-Fuen_US
dc.contributor.authorYang, Chung-Ien_US
dc.contributor.authorHung, Yu-Juen_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorZhang, Sheng-Dongen_US
dc.contributor.authorLin, Sung-Chunen_US
dc.contributor.authorYeh, Cheng-Yenen_US
dc.date.accessioned2018-08-21T05:52:40Z-
dc.date.available2018-08-21T05:52:40Z-
dc.date.issued2017-09-25en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.5004526en_US
dc.identifier.urihttp://hdl.handle.net/11536/143859-
dc.description.abstractThis letter investigates the effect of negative bias temperature stress (NBTS) on amorphous InGaZnO4 thin film transistors with copper electrodes. After 2000 s of NBTS, an abnormal subthreshold swing and on-current (I-on) degradation is observed. The recovery of the Id-Vg curve after either annealing or positive bias temperature stress suggests that there are some native mobile copper ions in the active layer. Both the existence of copper and the degradation mechanism can be confirmed by AC stress with different frequencies and by transmission electron microscope energy-dispersive X-ray spectroscopy analysis. Published by AIP Publishing.en_US
dc.language.isoen_USen_US
dc.titleInvestigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.5004526en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume111en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000412074000043en_US
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