1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorChen, Hsuan-Anen_US
dc.contributor.authorChen, Hsuan-Yuen_US
dc.contributor.authorChen, Wei-Chanen_US
dc.contributor.authorLin, Shih-Yenen_US
dc.date.accessioned2018-08-21T05:52:46Z-
dc.date.available2018-08-21T05:52:46Z-
dc.date.issued2017-10-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2017.2743619en_US
dc.identifier.urihttp://hdl.handle.net/11536/143928-
dc.description.abstractIn this letter, we have demonstrated that graphene can act as a transparent electrode on the p-type GaSb substrate. Wavelength-insensitive and over 95% high transmittance are observed for the bi-layer graphene in the infrared light range. By using graphene as the transparent electrode, over ten-time responsivity enhancement is observed for the InAs/GaSb type-II superlattice infrared photodetector. The phenomenon is attributed to the shortened carrier transport paths resulted from the vertical current flow to the graphene electrode. The results have revealed the potential of graphene for the application of infrared transparent electrodes.en_US
dc.language.isoen_USen_US
dc.subjectGrapheneen_US
dc.subjecttransparent electrodesen_US
dc.subjectInAs/GaSb type-II superlattice infrared photodetectorsen_US
dc.titleType-II Superlattice Infrared Photodetectors With Graphene Transparent Electrodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2017.2743619en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume29en_US
dc.citation.spage1691en_US
dc.citation.epage1694en_US
dc.contributor.department影像與生醫光電研究所zh_TW
dc.contributor.departmentInstitute of Imaging and Biomedical Photonicsen_US
dc.identifier.wosnumberWOS:000413027400012en_US
顯示於類別：期刊論文


相關內容
Loading...